Method of forming semiconductor device
US10608045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2019 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Mar 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of forming the same, the semiconductor device includes a substrate, first plug, a magnetoresistive random access memory (MRAM) structure, a spacer layer, a seal layer and a first conductive pattern. The substrate has a first region and a second region, and the first plug is disposed on a dielectric layer disposed on the substrate, within the first region. The MRAM structure is disposed in the dielectric layer and electrically connected to the first plug. The spacer layer is disposed both within the first region and the second region, to cover the MRAM structure. The seal layer is disposed on the MRAM structure and the first plug, only within the first region. The first conductive pattern penetrates through the seal layer to electrically connect the MRAM structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.