Superjunction structure in a power semiconductor device

US10615040B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roland Rupp · Achern, DE
• Alexander Breymesser · Villach, AT
• Andre Brockmeier · Villach, AT
• Ronny Kern · Finkenstein, AT
• Francisco Javier Santos Rodriguez · Villach, AT
• Carsten von Koblinski · Velden am Wörther See, AT

Key dates

• Filing date: Jun 7, 2017
• Grant date: Apr 7, 2020
• Expiry date: Aug 5, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/26546
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.