Surface nitridation in metal interconnects
US10615116B2 · kind B2 · utility
0Cited by
32References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2018 |
| Grant date | Apr 7, 2020 |
| Priority date | — |
| Expiry date | Jun 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive interface includes a first conductor having a recessed area in least one surface. A dielectric layer has a trench positioned over the first conductor. A nitridized layer is formed on a top surface of the first conductor around the recessed area, to a depth on the first conductor that is shallower than a depth of the recessed area. A second conductor is formed in the trench and the recessed area to form a conductive contact with the first conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.