Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
US10619235B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2017 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Jan 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02614
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.