Patent · US Active

Manufacturing method for electronic component

US10619261B2 · kind B2 · utility

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4Claims
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Assignee

Inventors

Key dates

Filing dateMar 22, 2018
Grant dateApr 14, 2020
Priority date
Expiry dateMar 22, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/18
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A manufacturing method for an electronic component according to an aspect of the present invention includes: forming a first metal layer on a substrate; forming a second metal layer on the first metal layer; forming a mask made of an organic resin layer on the second metal layer; performing plasma etching on the second metal layer by using a reactant gas including fluorine via the mask to thereby form a recess portion in a layered film of the organic resin layer and the second metal layer; performing oxygen ashing treatment on an inner surface of the recess portion; and forming a third metal layer in the recess portion by electroplating treatment after the oxygen ashing treatment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.