Memory structure with non-straight word line
US10622030B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Oct 28, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory structure includes a first memory cell, a first word line and a second word line. The first word line includes a first portion, a second portion and a third portion. The first portion extends from an end of the second portion along a first direction, and the third portion extends from an another end of the second portion along a second direction. An angle between the first direction and the second direction is less than 180°. The second word line includes a forth portion, a fifth portion and a sixth portion. The forth portion extends from an end of the fifth portion along a third direction, and the sixth portion extends from an another end of the fifth portion along a forth direction. An angle between the third direction and the forth direction is less than 180°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.