Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices
US10622206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2019 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Feb 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.