Junko Kobayashi
8Patents
3h-index
9Co-inventors
50Inventor score
Filing activity: Jan 31, 1996 → Apr 14, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6900067B2 | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers | Electricity | 53 | Expired |
| US6683327B2 | Nucleation layer for improved light extraction from light emitting devices | Electricity | 15 | Expired |
| US5741601A | Polyamide film and process for producing the same | Emerging Cross-Sectional Technologies | 13 | Expired |
| US10236409B2 | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices | Electricity | 3 | Active |
| US10622206B2 | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices | Electricity | 2 | Active |
| US11069525B2 | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices | Electricity | 0 | Active |
| US7906357B2 | P-type layer for a III-nitride light emitting device | Electricity | 0 | Active |
| US11069524B2 | Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.