Tungsten defluorination by high pressure treatment
US10622214B2 · kind B2 · utility
14Cited by
71References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 25, 2017 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | May 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems relating to processes for treating a tungsten film on a workpiece including supporting the workpiece in a chamber, introducing hydrogen gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the tungsten film on the workpiece to the hydrogen gas while the pressure in the chamber is at least 5 atmospheres.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.