Patent · US Active

Planar substrate edge contact with open volume equalization pathways and side containment

US10622243B2 · kind B2 · utility

2Cited by
1References
19Claims
0Family size

Inventors

Key dates

Filing dateFeb 13, 2017
Grant dateApr 14, 2020
Priority date
Expiry dateMar 12, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/6715
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass through the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.