Karl Leeser
135Patents
20h-index
86Co-inventors
93Inventor score
Filing activity: Apr 19, 1999 → Jun 4, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6428859B1 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | Electricity | 686 | Expired |
| US8940646B1 | Sequential precursor dosing in an ALD multi-station/batch reactor | Electricity | 519 | Active |
| US6878402B2 | Method and apparatus for improved temperature control in atomic layer deposition | Electricity | 476 | Expired |
| US9875891B2 | Selective inhibition in atomic layer deposition of silicon-containing films | Electricity | 458 | Active |
| US9564312B2 | Selective inhibition in atomic layer deposition of silicon-containing films | Electricity | 393 | Active |
| US9449795B2 | Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor | Electricity | 377 | Active |
| US6416822B1 | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | Electricity | 298 | Expired |
| US6630201B2 | Adsorption process for atomic layer deposition | Electricity | 240 | Expired |
| US6569501B2 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | Electricity | 171 | Expired |
| US6800173B2 | Variable gas conductance control for a process chamber | Electricity | 94 | Expired |
| US10121689B2 | Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing | Electricity | 41 | Active |
| US9704692B2 | System for instantaneous radiofrequency power measurement and associated methods | Electricity | 34 | Active |
| US6949450B2 | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber | Emerging Cross-Sectional Technologies | 33 | Expired |
| US8053372B1 | Method of reducing plasma stabilization time in a cyclic deposition process | Electricity | 31 | Active |
| US7189432B2 | Varying conductance out of a process region to control gas flux in an ALD reactor | Electricity | 29 | Expired |
| US6236555A | Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle | Emerging Cross-Sectional Technologies | 27 | Expired |
| US7318869B2 | Variable gas conductance control for a process chamber | Electricity | 23 | Expired |
| US10109517B1 | Rotational indexer with additional rotational axes | Electricity | 23 | Active |
| US6179921A | Backside gas delivery system for a semiconductor wafer processing system | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7806983B2 | Substrate temperature control in an ALD reactor | Emerging Cross-Sectional Technologies | 20 | Active |
| US9960068B1 | Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing | Electricity | 16 | Active |
| US6307728A | Method and apparatus for dechucking a workpiece from an electrostatic chuck | Electricity | 15 | Expired |
| US9441296B2 | Hybrid ceramic showerhead | Chemistry; Metallurgy | 15 | Active |
| US9388494B2 | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region | Electricity | 15 | Active |
| US9490149B2 | Chemical deposition apparatus having conductance control | Electricity | 14 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.