Methods for wordline separation in 3D-NAND devices
US10622251B2 · kind B2 · utility
6Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2019 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Jul 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.