Patent · US Active

Apparatus and method for ion implantation

US10622268B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Georg Laven · Taufkirchen, DE
Moriz Jelinek · Villach, AT
Werner Schustereder · Villach, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Dec 8, 2015
Grant date	Apr 14, 2020
Priority date	—
Expiry date	Dec 8, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31703
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An apparatus and a method for implanting ions are disclosed. In an embodiment, the apparatus includes a receptacle configured to support the wafer, a source of dopants configured to selectively provide dopants to an implantation region of the wafer and a source of radiation configured to selectively irradiate the implantation region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.