Etching method and plasma processing apparatus
US10622269B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Aug 30, 2017 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Aug 30, 2037 |
Classification
- Technology area (CPC —)General
Abstract
The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.