Method of rounding corners of a fin
US10622481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Apr 14, 2020 |
| Priority date | — |
| Expiry date | Aug 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of rounding corners of a fin includes providing a substrate with a fin protruding from the substrate, wherein a pad oxide and a pad nitride entirely cover a top surface of the fin. Later, part of the pad oxide is removed laterally to expose part of the top surface of the fin. A silicon oxide layer is formed to contact two sidewalls of the fin and the exposed top surface, wherein two sidewalls and the top surface define two corners of the fin. After forming the silicon oxide layer, an annealing process is performed to round two corners of the fin. Finally, after the annealing process, an STI filling material is formed to cover the pad nitride, the pad oxide and the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.