Metal insulator metal capacitor devices
US10629428B2 · kind B2 · utility
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14Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.