Method of manufacturing semiconductor device and vacuum processing apparatus
US10629448B2 · kind B2 · utility
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12References
6Claims
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Key dates
| Filing date | Mar 13, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Apr 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device by processing a substrate, the method includes forming a first film of a polymer having urea bonds by supplying a polymerization raw material to a surface of the substrate, subsequently, forming a pattern by etching the first film, and subsequently, forming a second film of a material different from the polymer of the first film by performing a substitution processing to the first film by supplying a reaction gas, which reacts with the polymerization raw material to generate a product, to the substrate while heating the substrate to depolymerize the polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.