Through silicon via design for stacking integrated circuits
US10629592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | May 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a first IC die comprises a first bonding structure and a first interconnect structure over a first semiconductor substrate. A second IC die is disposed over the first IC die and comprises a second bonding structure and a second interconnect structure over a second semiconductor substrate. A seal-ring structure is in the first and second IC dies and extends from the first semiconductor substrate to the second semiconductor substrate. A plurality of through silicon via (TSV) coupling structures is arranged in the peripheral region of the 3D IC along an inner perimeter of the seal-ring structure. The plurality of TSV coupling structures respectively comprises a through silicon via (TSV) disposed in the second semiconductor substrate and electrically coupling to the 3D IC through a stack of TSV wiring layers and inter-wire vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.