Power semiconductor device having different gate crossings, and method for manufacturing thereof
US10629595B2 · kind B2 · utility
1Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2018 |
| Grant date | Apr 21, 2020 |
| Priority date | — |
| Expiry date | Jun 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A power semiconductor device includes a semiconductor substrate having a first side. A plurality of active transistor cells is formed in an active area of the semiconductor substrate. Each of the plurality of active transistor cells includes a spicular trench which extends from the first side into the semiconductor substrate and has a field electrode. A gate electrode structure has a plurality of intersecting gate trenches running between the spicular trenches. The intersecting gate trenches form gate crossing regions of different shape when seen in a plan projection onto the first side of the power semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.