Semiconductor device and fabrication method thereof

US10629728B1 · kind B1 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Zhi-Cheng Lee · Tainan, TW
• Wei-Jen Chen · San Diego, US
• Kai-Lin Lee · Guting, TW

Key dates

• Filing date: Jan 20, 2019
• Grant date: Apr 21, 2020
• Expiry date: Jan 20, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A semiconductor device including a substrate having a fin structure surrounded by a trench isolation region; a trench disposed in the fin structure; a silicon nitride trench-fill layer disposed in the trench; an interlayer dielectric layer disposed on the silicon nitride trench-fill layer; a working gate striding over the fin structure, on the first side of the trench; a dummy gate striding over the fin structure, on the second side of the trench; a doped source region in the fin structure; and a doped drain region in the fin structure. The dummy gate is disposed between the trench and the doped drain region.