Kai-Lin Lee
32Patents
3h-index
24Co-inventors
55Inventor score
Filing activity: Sep 8, 2015 → Mar 6, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11239327B2 | HEMT and method of adjusting electron density of 2DEG | Electricity | 14 | Active |
| US9450094B1 | Semiconductor process and fin-shaped field effect transistor | Electricity | 10 | Active |
| US11088271B2 | High electron mobility transistor and method for fabricating the same | Electricity | 5 | Active |
| US9640661B1 | FinFET having a fin and a V-shaped epitaxial layer formed on the top surface of the fin and method for fabricating the same | Electricity | 2 | Active |
| US10103265B1 | Complementary metal oxide semiconductor device and method of forming the same | Electricity | 2 | Active |
| US10566244B2 | Semiconductor device and method for fabricating the same | Electricity | 2 | Active |
| US10629728B1 | Semiconductor device and fabrication method thereof | Electricity | 1 | Active |
| US11332120B2 | Method of energy management and computer system for energy management | Emerging Cross-Sectional Technologies | 1 | Active |
| US11380777B2 | Method for forming a high-voltage metal-oxide-semiconductor transistor device | Electricity | 1 | Active |
| US11749748B2 | High electron mobility transistor and method for fabricating the same | Electricity | 1 | Active |
| US11955541B2 | Semiconductor device and method for forming the same | Electricity | 0 | Active |
| US12176403B2 | High electron mobility transistor device | Electricity | 0 | Active |
| US10629734B2 | Fabricating method of fin structure with tensile stress and complementary FinFET structure | Electricity | 0 | Active |
| US11127838B2 | Method of fabricating metal gate transistor | Electricity | 0 | Active |
| US12107121B2 | Method for forming air gap between gate dielectric layer and spacer | Electricity | 0 | Active |
| US11527652B2 | Semiconductor process | Electricity | 0 | Active |
| US10756209B2 | Semiconductor device | Electricity | 0 | Active |
| US11664450B2 | High voltage semiconductor device | Electricity | 0 | Active |
| US12396195B2 | High electron mobility transistor device and manufacturing method thereof | Electricity | 0 | Active |
| US10861974B2 | Semiconductor structure and process thereof | Electricity | 0 | Active |
| US11652154B2 | Method of fabricating metal gate transistor | Electricity | 0 | Active |
| US12107157B2 | High electron mobility transistor and method for fabricating the same | Electricity | 0 | Active |
| US11610973B2 | High voltage transistor structure and method of fabricating the same | Electricity | 0 | Active |
| US11011430B2 | Semiconductor device and method for fabricating the same | Electricity | 0 | Active |
| US12266723B2 | Semiconductor device and method for forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.