Film deposition method of depositing film and film deposition apparatus
US10636648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Nov 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.