Selective deposition for simplified process flow of pillar formation
US10636659B2 · kind B2 · utility
2Cited by
32References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Apr 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76889
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.