Patent · US Active

Semiconductor chip and method for forming a chip pad

US10636754B2 · kind B2 · utility

0Cited by

3References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stefan Kramp · Villach, AT
Marco Koitz · Villach, AT

Key dates

Filing date	Jan 30, 2019
Grant date	Apr 28, 2020
Priority date	—
Expiry date	Jan 30, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/13091
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor chip with different chip pads and a method for forming a semiconductor chip with different chip pads are disclosed. In some embodiments, a semiconductor chip includes a chip front side, a first chip pad located on the chip front side, a second chip pad located on the chip front side and an electrically insulating material located between the first chip pad and the second chip pad, wherein the first chip pad includes a surface layer predominantly comprising copper and the second chip pad includes a surface layer predominantly comprising aluminum.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.