Semiconductor device and method of forming a 3D integrated system-in-package module
US10636774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2017 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Nov 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A conductive pillar is formed on the first substrate. A first encapsulant is deposited over the first substrate and semiconductor die after forming the conductive pillar. A groove is formed in the first encapsulant around the conductive pillar. A first passive device is disposed over a second substrate. A second encapsulant is deposited over the first passive device and second substrate. The first substrate is mounted over the second substrate. A shielding layer is formed over the second encapsulant. A second passive device can be mounted over the second substrate opposite the first passive device and outside a footprint of the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.