Transistor with low resistivity carbon alloy
US10636789B2 · kind B2 · utility
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4References
26Claims
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Key dates
| Filing date | Jul 28, 2017 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Jan 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A complementary metal-oxide-semiconductor (CMOS) transistor may include a first semiconductor structure and a gate stack on the first semiconductor structure. The gate stack may include a gate dielectric layer on the first semiconductor structure, a work function material on the gate dielectric layer, and a gate metal fill material on the work function material of the gate stack. The gate metal fill material may include a low resistivity carbon alloy. A dielectric fill material may be included on the gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.