Resistive random access memory and method for forming the same

US10636842B1 · kind B1 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Chia-Wen Cheng · Hsinchu, TW
• Yi-Hsiu Chen · Hsinchu, TW
• Po-Yen Hsu · New Taipei, TW
• Ping Wang
• Ming-Che Lin · Zhuolan Township, TW
• He-Hsuan Chao · Taichung, TW

Key dates

• Filing date: Feb 21, 2019
• Grant date: Apr 28, 2020
• Expiry date: Feb 21, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A method for forming a resistive random access memory includes forming a layer stack, patterning the layer stack to form a plurality of stack structures, forming a protection layer along sidewalls of the plurality of stack structures, forming a first isolation structure between the plurality of stack structures, forming at least one recess in at least one stack structure to define a plurality of filament units, and forming a second isolation structure in the at least one recess. The layer stack includes a bottom electrode and a resistive switching layer on the bottom electrode.