Replacement metal gate with reduced shorting and uniform chamfering
US10636893B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2018 |
| Grant date | Apr 28, 2020 |
| Priority date | — |
| Expiry date | Aug 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to replacement metal gate structures with reduced shorting and uniform chamfering, and methods of manufacture. The structure includes: a long channel device composed of a conductive gate material with a capping layer over the conductive gate material and extending to sides of the conductive gate material; and a short channel device composed of the conductive gate material and the capping layer over the conductive gate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.