Method for depositing a silicon nitride film and film deposition apparatus
US10643837B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Aug 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate. In the method, a first adsorption blocking region is formed by adsorbing first chlorine radicals such that an amount of adsorption increases upward from a bottom portion of the recessed pattern. A source gas that contains silicon and chlorine adsorbs on an adsorption site where the first adsorption site is not formed. A molecular layer of a silicon nitride film is deposited so as to have a V-shaped cross section. A second adsorption blocking region is formed by adsorbing second chlorine radicals on the molecular layer of the silicon nitride film. The molecular layer of the silicon nitride film is modified by nitriding the molecular layer while removing the second adsorption blocking region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.