In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD
US10643838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Nov 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.