Hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication

US10643859B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Robert L. Bruce · White Plains, US
• Eric A. Joseph · White Plains, US
• Joe Lee · Albany, US
• Takefumi Suzuki · Tokyo, JP

Key dates

• Filing date: Sep 13, 2018
• Grant date: May 5, 2020
• Expiry date: Sep 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5329
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.