Method for manufacturing a semiconductor structure with temporary direct bonding using a porous layer
US10643884B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2016 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Sep 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor structure, including: direct bonding a substrate to be handled with a handle substrate via a bonding layer covering the handle substrate, to form a temporary structure capable of withstanding technological steps; disassembling the temporary structure at the bonding layer to separate the substrate to be handled from the handle substrate; and a prior depositing the bonding layer onto the handle substrate and/or onto the substrate to be handled, the bonding layer including a porous material including, an inorganic matrix and organic compounds connected or not to the matrix, and the disassembling is carried out by providing a thermal budget for disassembly to the intermediate structure, the providing resulting in a spontaneous disassembly of the temporary structure occurring at the bonding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.