Method for forming semiconductor structure
US10644166B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Sep 13, 2018 |
| Grant date | May 5, 2020 |
| Priority date | — |
| Expiry date | Nov 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The present invention provides a method for forming a semiconductor structure, the method includes: firstly, a substrate having a recess disposed therein is provided, wherein the substrate comprises a silicon substrate, next, a first element is formed in the recess and arranged along a first direction, wherein the first element is made of an oxidation semiconductor material, afterwards, a dielectric layer is formed on the first element, and a second element is formed on dielectric layer and arranged along the first direction, wherein the second element is used as the gate structure of a transistor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.