Electrolyte, method of forming a copper layer and method of forming a chip

US10648096B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Werner Robl · Regensburg, DE
• Michael Melzl · Neutraubling, DE
• Manfred Schneegans · Vaterstetten, DE
• Bernhard Weidgans · Bernhardswald, DE
• Franziska Haering · Regensburg, DE

Key dates

• Filing date: Nov 23, 2015
• Grant date: May 12, 2020
• Expiry date: Nov 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided. The semiconductor device may include a metal layer including a plurality of pores, wherein the plurality of pores may be formed in the metal layer as remnants of an additive having resided in the plurality of pores and having at least partially decomposed or evaporated. To keep a high elasticity over a wide temperature range (up to 450° C.), an adhesion layer may stabilize the metal grain boundaries and may fix…