Semiconductor device
US10651276B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 12, 2018 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Sep 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0297
Abstract
A semiconductor device has a cell which includes a first semiconductor region of a first conductive type, a base region of a second conductive type on the first semiconductor region, a source region of the first conductive type on the base region, a gate electrode penetrating through the base region in a first direction to reach the first semiconductor region and extending in a second direction, and a gate insulting film between the gate electrode and the first semiconductor region, between the gate electrode and the base region, and between the gate electrode and the source region. The cell has a region having a first threshold voltage and a region having a second threshold voltage higher than the first threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.