Perpendicular magnetic tunnel junction retention and endurance improvement
US10651370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | May 12, 2020 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic free layer includes a layer of Hf that causes the magnetic free layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves data retention and increases thermal stability, by preventing the magnetization of the magnetic free layer from inadvertently losing its magnetic orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.