Methods of mitigating cobalt diffusion in contact structures and the resulting devices
US10658176B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Sep 6, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Sep 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.