Silicon-based deposition for semiconductor processing
US10658194B2 · kind B2 · utility
2Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2016 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Aug 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0387
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a substrate in a processing chamber, comprising forming a deposition over the substrate is provided. A silicon containing gas is flowed into the processing chamber. A COS containing gas is flowed into the processing chamber. A plasma is formed from the silicon containing gas and the COS containing gas in the processing chamber, wherein the plasma provides the deposition over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.