Qian Fu
59Patents
7h-index
78Co-inventors
71Inventor score
Filing activity: Sep 30, 2005 → Feb 1, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9583357B1 | Systems and methods for reverse pulsing | Electricity | 90 | Active |
| US9761459B2 | Systems and methods for reverse pulsing | Electricity | 85 | Active |
| US8609546B2 | Pulsed bias plasma process to control microloading | Electricity | 22 | Active |
| US9991128B2 | Atomic layer etching in continuous plasma | Electricity | 21 | Active |
| US8329051B2 | Method for forming stair-step structures | Electricity | 14 | Active |
| US8901004B2 | Plasma etch method to reduce micro-loading | Electricity | 11 | Active |
| US9741563B2 | Hybrid stair-step etch | Electricity | 9 | Active |
| US7629255B2 | Method for reducing microloading in etching high aspect ratio structures | Electricity | 6 | Active |
| US8518282B2 | Method of controlling etch microloading for a tungsten-containing layer | Electricity | 5 | Active |
| US8753804B2 | Line width roughness improvement with noble gas plasma | Electricity | 5 | Active |
| US10446394B2 | Spacer profile control using atomic layer deposition in a multiple patterning process | Electricity | 5 | Active |
| US8440573B2 | Method and apparatus for pattern collapse free wet processing of semiconductor devices | Electricity | 4 | Active |
| US9275872B2 | Method for forming stair-step structures | Electricity | 3 | Active |
| US9263284B2 | Line width roughness improvement with noble gas plasma | Electricity | 3 | Active |
| US9466502B2 | Line width roughness improvement with noble gas plasma | Electricity | 3 | Active |
| US8535549B2 | Method for forming stair-step structures | Electricity | 3 | Active |
| US9633867B2 | Method and apparatus for anisotropic tungsten etching | Electricity | 3 | Active |
| US9824896B2 | Methods and systems for advanced ion control for etching processes | Emerging Cross-Sectional Technologies | 3 | Active |
| US9129902B2 | Continuous plasma ETCH process | Electricity | 2 | Active |
| US9767991B2 | Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication | Electricity | 2 | Active |
| US10658194B2 | Silicon-based deposition for semiconductor processing | Electricity | 2 | Active |
| US7682979B2 | Phase change alloy etch | Electricity | 2 | Active |
| US10354888B2 | Method and apparatus for anisotropic tungsten etching | Electricity | 2 | Active |
| US8431461B1 | Silicon nitride dry trim without top pulldown | Electricity | 1 | Active |
| US9646844B2 | Method for forming stair-step structures | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.