Patent · US Active

Carrier substrate for a semiconductor device and a method for forming a carrier substrate for a semiconductor device

US10658201B2 · kind B2 · utility

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19Claims

0Family size

Assignee

Intel IP Corporation · US

Inventors

Sonja Koller · Regensburg, DE
Georg Seidemann · Landshut, DE
Bernd Waidhas · Nittendorf, DE

Key dates

Filing date	Mar 26, 2018
Grant date	May 19, 2020
Priority date	—
Expiry date	Mar 26, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L23/49866
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a carrier substrate for a semiconductor device, the method includes providing a substrate layer including conductive particles embedded in an electrically insulating material and localized heating of the substrate layer along a desired trace by a laser to form a conductive trace of merged particles along the desired trace.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.