Rework for metal interconnects using etch and thermal anneal

US10658235B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Prasad Bhosale · Slingerlands, US
• Terry A. Spooner · Clifton Park, US
• Chih-Chao Yang · Glenmont, US
• Lawrence A. Clevenger · Saratoga Springs, US

Key dates

• Filing date: Jun 21, 2018
• Grant date: May 19, 2020
• Expiry date: Jun 21, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/20
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Metal interconnect structures are reworked to address possible voids or other defects. Etching of initially deposited interconnect metal to open voids is followed by reflow to accumulate interconnect metal at the bottoms of trenches. Additional interconnect metal is deposited over the initially deposited interconnect metal by electroplating and/or electroless plating. Additional diffusion barrier material may be deposited and patterned prior to deposition of the additional interconnect material.