Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer

US10658574B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR
• UNIVERSITE GRENOBLE ALPES · FR

Inventors

• Jyotirmoy Chatterjee · Narayanpur, IN
• Bernard Dieny · Le Pont-de-Claix, FR
• Ricardo Sousa · Amadora, PT
• Stephane Auffret · Échirolles, FR

Key dates

• Filing date: Aug 10, 2018
• Grant date: May 19, 2020
• Expiry date: Oct 6, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01F10/3236
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A synthetic antiferromagnetic layer includes a first ferromagnetic layer containing an amorphizing element, the first ferromagnetic layer having a first structural symmetry; a second ferromagnetic layer having a second structural symmetry; wherein the first and the second ferromagnetic layers are antiferromagnetically coupled by a trifunctional non-magnetic multi-layered structure, the antiferromagnetic coupling being an Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling, the non-magnetic multi-layered structure including at least two non-magnetic layers, the non-magnetic multilayered structure being at least partially nano-crystalline or amorphous in order to ensure a structural transition between the first ferromagnetic layer having the first structural symmetry and the second ferromagnetic layer having the second structural symmetry, the non-magnetic multilayered structure being adapted to absorb at least part of the amorphizing element out of the first ferromagnetic layer in contact with the non-magnetic multi-layered structure.