Patent · US Active

Manifolds for uniform vapor deposition

US10662527B2 · kind B2 · utility

7Cited by
113References
22Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 1, 2016
Grant dateMay 26, 2020
Priority date—
Expiry dateJun 1, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/28556
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.