In-situ beam profile metrology
US10665421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2018 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Oct 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/317
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.