Etching method and plasma processing apparatus
US10665516B2 · kind B2 · utility
3Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2017 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Aug 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.