Patent · US Active

Method for processing a semiconductor device and semiconductor device

US10665687B2 · kind B2 · utility

0Cited by

9References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Andreas Haertl · Munich, DE
Francisco Javier Santos Rodriguez · Villach, AT
Andre Rainer Stegner · Unterhaching, DE
Daniel Schloegl · Villach, AT

Key dates

Filing date	Mar 22, 2017
Grant date	May 26, 2020
Priority date	—
Expiry date	Apr 9, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/28537
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.