High-electron-mobility transistor with buried interconnect
US10665711B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2019 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Jun 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-electron-mobility transistor (HEMT) includes a substrate layer of silicon, a first contact disposed on a first surface of the substrate layer, and a number of layers disposed on a second surface of the substrate layer opposite the first surface. A second contact and a gate contact are disposed on those layers. A trench containing conducting material extends completely through the layers and into the substrate layer. In an embodiment of the HEMT, the first contact is a drain contact and the second contact is a source contact. In another embodiment of the HEMT, the first contact is a source contact and the second contact is a drain contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.