Yongping Ding
22Patents
4h-index
19Co-inventors
56Inventor score
Filing activity: Jun 29, 2010 → Oct 29, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8785279B2 | High voltage field balance metal oxide field effect transistor (FBM) | Electricity | 14 | Active |
| US9129822B2 | High voltage field balance metal oxide field effect transistor (FBM) | Electricity | 9 | Active |
| US8803251B2 | Termination of high voltage (HV) devices with new configurations and methods | Electricity | 6 | Active |
| US8587061B2 | Power MOSFET device with self-aligned integrated Schottky diode | Electricity | 5 | Active |
| US9478646B2 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Electricity | 3 | Active |
| US8697520B2 | Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS | Electricity | 2 | Active |
| US8252648B2 | Power MOSFET device with self-aligned integrated Schottky and its manufacturing method | Electricity | 2 | Active |
| US9450083B2 | High voltage field balance metal oxide field effect transistor (FBM) | Electricity | 1 | Active |
| US8716069B2 | Semiconductor device employing aluminum alloy lead-frame with anodized aluminum | Emerging Cross-Sectional Technologies | 1 | Active |
| US9431495B2 | Method of forming SGT MOSFETs with improved termination breakdown voltage | Electricity | 1 | Active |
| US9997593B2 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Electricity | 1 | Active |
| US10381473B2 | High-electron-mobility transistor with buried interconnect | Electricity | 1 | Active |
| US9865678B2 | High voltage field balance metal oxide field effect transistor (FBM) | Electricity | 1 | Active |
| US10115814B2 | Process method and structure for high voltage MOSFETs | Electricity | 1 | Active |
| US9704948B2 | Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof | Electricity | 1 | Active |
| US10050134B2 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Electricity | 0 | Active |
| US9627526B2 | Assymetric poly gate for optimum termination design in trench power MOSFETs | Electricity | 0 | Active |
| US12371390B2 | Modified calcium silicate board and surface treatment method and application thereof | Chemistry; Metallurgy | 0 | Active |
| US9887283B2 | Process method and structure for high voltage MOSFETs | Electricity | 0 | Active |
| US10522666B2 | Methods for fabricating anode shorted field stop insulated gate bipolar transistor | Electricity | 0 | Active |
| US9755052B2 | Process method and structure for high voltage MOSFETS | Electricity | 0 | Active |
| US10665711B2 | High-electron-mobility transistor with buried interconnect | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.