LDMOS device with a field plate contact metal layer with a sub-maximum size
US10665712B2 · kind B2 · utility
2Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2018 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Sep 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
Abstract
An LDMOS device with a field plate contact having a field plate contact metal layer being positioned above the field plate contact. The field plate contact metal layer has a sub-maximum size satisfied for the electrical connection between the field plate contact and an external applying voltage. This sub-maximum size is prescribed by the physical limitation of the LDMOS device. The field plate contact metal layer extends a sub-maximum length from one edge toward to the other edge of the field plate contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.