Fin strain in quantum dot devices

US10665770B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ravi Pillarisetty · Portland, US
• Kanwaljit Singh · Rotterdam, NL
• Patrick H. Keys · Portland, US
• Roman Caudillo · Portland, US
• Hubert C. George · Portland, US
• Zachary R. Yoscovits · Beaverton, US
• Nicole K. Thomas · Portland, US
• James S. Clarke · Portland, US
• Roza Kotlyar · Portland, US
• Payam Amin · Portland, US
• Jeanette M. Roberts · North Plains, US

Key dates

• Filing date: Mar 6, 2018
• Grant date: May 26, 2020
• Expiry date: Mar 6, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin includes a quantum well layer; a gate above the fin; and a material on side faces of the fin; wherein the fin has a width between its side faces, and the fin is strained in the direction of the width.